N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
• High cross modulation performance
• Low noise figure
• High gain
• High AGC-range
• Low feedback capacitance
• Low input capacitance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Input- and mixer stages especially VHF- and UHFtuners.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF965
Pinning:
1 = Drain, 2 = Source,
BF965 | PHILIPS BF965 Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50 Qty-1 |
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